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3N10-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

3N10-MS product

3N10-MS

MOSFETs - Single

MOSFETN-Channel100VSOT-23

The 3N10-MS is a 100V N-channel MOSFET in an SOT-23 package, optimized for small power switching and load management.

Best for

  • Small power switching
  • Load switch applications

Avoid if

  • High-current applications exceeding 3A
  • Applications requiring low-voltage gate drive below 4.5V

Check before use

  • Thermal dissipation in SOT-23 package
  • Gate drive voltage levels

Key specifications

BVDSS
100V
ID
3A
RDS(on)
90mΩ (Typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Switching

Datasheet

9fbb3505cd168bb2955be6a1a6ca18f4_2210271600_MSKSEMI-3N10-MS_C5140035.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 3N10-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high cell density trenched N-channel MOSFET from MSKSEMI, designed for efficient power switching.