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55GN01CA-TB-E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

55GN01CA-TB-E product

55GN01CA-TB-E

Transistors - Bipolar (BJT) - RF

RF TransistorNPNonsemi

The 55GN01CA-TB-E is a high-frequency NPN RF transistor from onsemi, optimized for signal amplification with a 5.5GHz cutoff frequency.

Best for

  • RF signal amplification
  • High-frequency signal processing

Avoid if

  • High-power switching applications

Check before use

  • Thermal management and RF impedance matching

Key specifications

Cutoff Frequency
5.5 GHz
Gain
9.5 dB
VCEO
10 V
IC
70 mA

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

RF Amplification

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

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CAD Models

Download ECAD models for 55GN01CA-TB-E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN RF transistor designed for high-frequency applications, featuring a 5.5GHz cutoff frequency and 10V collector-to-emitter voltage.