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60N06 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

60N06 product

60N06

MOSFETs - Single

MOSFETN-Channel60VPower

The 60N06 is a 60V, 50A N-Channel Power MOSFET using trench technology, designed for efficient power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring higher than 60V VDS or extremely low-power, low-current switching where smaller packages are preferred.

Check before use

  • Thermal design and gate drive voltage levels.

Key specifications

VDS
60V
ID
50A
RDS(ON)
<17mΩ
Package
TO-252

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

products-detail.php

800 KB

Datasheet AI

CAD Models

Download ECAD models for 60N06: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 60N06 is an N-Channel enhancement mode power MOSFET from GOFORD, utilizing advanced trench technology for low gate charge and low on-resistance.