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8205A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

8205A-HXY product

8205A-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSOT-23-6L

The 8205A-HXY is a dual N-channel enhancement mode MOSFET in a SOT-23-6L package, designed for battery protection and power management.

Best for

  • Battery protection
  • Portable power management

Avoid if

  • High-power applications exceeding 1.25W dissipation

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
20 V
ID
6 A
RDS(ON)
< 25 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

7ff1014f39265becbc78393b213670f9_2212161630_HXY-MOSFET-8205A-HXY_C5148660.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 8205A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET utilizing trench technology, optimized for low gate charge and low on-resistance.