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ADQ120N080G2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ADQ120N080G2 product

ADQ120N080G2

MOSFETs - Single

SiC MOSFET1200VPower MOSFET

The ADQ120N080G2 is a 1200V SiC N-Channel MOSFET optimized for high-efficiency power switching in industrial and power conversion applications.

Best for

  • High-efficiency power conversion
  • Inverters
  • Industrial power supplies

Avoid if

  • Low-voltage applications where SiC is not cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal resistance requirements

Key specifications

VDS
1200 V
ID
35 A
RDS(on)
80 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

ddd9e9099fa7f6f6d1562ef664f087d7_2303301800_ANHI-ADQ120N080G2_C5440043.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ADQ120N080G2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) power MOSFET featuring low on-resistance and high-speed switching capabilities.