ProjectsPricingInsights

AGM10N65F AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM10N65F product

AGM10N65F

MOSFETs - Single

MOSFET650VN-ChannelPower

The AGM10N65F is a 650V, 10A N-Channel Trench MOSFET designed for high-efficiency power applications.

Best for

  • Power conversion
  • Lighting ballasts

Avoid if

  • Applications requiring extremely low thermal resistance beyond TO-220F capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
650 V
ID
10 A
RDS(on)
0.77 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

5d9c23ba907a9992ea9874a832aa0feb_2306191430_AGM-Semi-AGM10N65F_C7431155.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM10N65F: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Trench MOSFET with a 650V breakdown voltage and 10A continuous drain current, optimized for low conduction losses.