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AGM12N10A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM12N10A product

AGM12N10A

MOSFETs - Single

MOSFETN-Channel100VPower

The AGM12N10A is a 100V, 55A N-channel trench MOSFET designed for high-efficiency power applications in a compact PDFN5*6 package.

Best for

  • Load switching
  • Battery protection
  • Synchronous rectification
  • BLDC motor control

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V.

Check before use

  • Thermal design
  • Gate drive circuit compatibility

Key specifications

VDS
100 V
ID
55 A
RDS(on)
9.3 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

90569692fdca7a2418a5a7240bb4af9d_2402221102_AGM-Semi-AGM12N10A_C5464768.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM12N10A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM12N10A is an advanced trench MOSFET featuring low RDS(ON) and low gate charge, optimized for power switching applications.