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AGM18N10AP AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM18N10AP product

AGM18N10AP

MOSFETs - Single

N-ChannelTrench MOSFET100VPDFN3.3*3.3

The AGM18N10AP is a 100V, 35A N-Channel Trench MOSFET in a compact PDFN3.3*3.3 package, optimized for low conduction losses and high-efficiency power switching.

Best for

  • Load switching
  • Battery protection
  • BLDC motor control

Avoid if

  • Applications requiring higher than 100V VDS or significantly higher current than 35A.

Check before use

  • Thermal design and PCB layout for the PDFN3.3*3.3 package.

Key specifications

VDS
100 V
ID
35 A
RDS(on)
17 mΩ
Qg
12.5 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

fb9b8c399358a414baef138c2100bb19_2402221102_AGM-Semi-AGM18N10AP_C7509649.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM18N10AP: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Trench MOSFET from AGM-Semi, featuring a 100V drain-source voltage and 35A continuous current capability.