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AGM30P100A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM30P100A product

AGM30P100A

MOSFETs - Single

P-ChannelMOSFETTrenchPower

The AGM30P100A is a high-performance P-Channel Trench MOSFET designed for power management applications requiring low conduction losses.

Best for

  • Load switching
  • Battery protection
  • BLDC motor drivers

Avoid if

  • Applications requiring N-Channel polarity
  • Extremely space-constrained designs smaller than PDFN5*6

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-118 A
RDS(on)
3.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

4a0fa0611cf21f84080c9fcf5dbd9675_2212011530_AGM-Semi-AGM30P100A_C5297493.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM30P100A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM30P100A is a -30V, -118A P-Channel Trench MOSFET featuring low RDS(on) (3.7mΩ) and low gate charge, optimized for high-efficiency power switching.