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AGM30P10A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM30P10A product

AGM30P10A

MOSFETs - Single

P-ChannelMOSFETTrenchPDFN5*6

The AGM30P10A is a -30V, -40A P-Channel Trench MOSFET in a PDFN5*6 package, optimized for high-efficiency power switching applications.

Best for

  • Battery management
  • Load switching

Avoid if

  • Applications requiring extremely low RDS(on) where N-Channel is feasible

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
-30 V
ID
-40 A
RDS(on)
11 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

6c4a3564e385fd5103a290d5f70e250c_2303011000_AGM-Semi-AGM30P10A_C5367088.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM30P10A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET utilizing advanced trench technology, housed in a compact PDFN5*6 surface-mount package.