ProjectsPricingInsights

AGM30P55D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM30P55D product

AGM30P55D

MOSFETs - Single

P-ChannelMOSFET30VTO-252

The AGM30P55D is a high-performance -30V P-Channel Trench MOSFET in a TO-252 package, optimized for low conduction losses in power management applications.

Best for

  • Battery protection
  • Load switching
  • Motor control

Avoid if

  • Applications requiring N-Channel logic
  • High-voltage systems exceeding 30V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-65 A
RDS(on)
5 mΩ
Qg
28 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

3157e36ef23c7455043199f538cfca0d_2311161805_AGM-Semi-AGM30P55D_C19193070.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM30P55D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Trench MOSFET with a -30V drain-source voltage and -65A continuous drain current, housed in a TO-252 package.