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AGM311MAP AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM311MAP product

AGM311MAP

MOSFETs - Single

MOSFETDual N-ChannelTrench Technology

The AGM311MAP is a dual N-channel trench MOSFET designed for high-efficiency power switching applications in a compact PDFN3.3*3.3 package.

Best for

  • Battery protection
  • Load switching
  • BLDC motor control

Avoid if

  • Applications requiring higher than 30V drain-source voltage
  • High-current designs exceeding 25A continuous current

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

BVDSS
30 V
ID
25 A
RDS(on)
10.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

b8b56f6d38a2f5e6cf6c82d75db1f253_2212011530_AGM-Semi-AGM311MAP_C5297491.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM311MAP: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM311MAP is a dual N-channel trench MOSFET from AGM-Semi, optimized for low conductive loss and fast switching in compact power applications.