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AGM314MAP AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM314MAP product

AGM314MAP

MOSFETs - Single

MOSFETDual ChannelTrench Technology

The AGM314MAP is a dual N-Channel and P-Channel MOSFET designed for high-efficiency power management in compact applications.

Best for

  • Load switching
  • Battery protection circuits
  • BLDC motor drivers

Avoid if

  • Applications requiring higher voltage ratings than 30V
  • Extremely high-power designs exceeding 29.7W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30V / -30V
ID
30A / -20A
RDS(on)
10mΩ / 18.5mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

CAD Models

Download ECAD models for AGM314MAP: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM314MAP is a complementary (N-Channel and P-Channel) MOSFET pair housed in a space-saving PDFN3.3x3.3 package, utilizing trench technology for low RDS(ON).