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AGM3407E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM3407E product

AGM3407E

MOSFETs - Single

P-ChannelMOSFETTrench

The AGM3407E is a -30V P-Channel Trench MOSFET in a SOT-23-3 package, optimized for low-resistance power switching applications.

Best for

  • Battery protection
  • Load switching
  • BLDC motor drivers

Avoid if

  • High-current applications exceeding 4A
  • High-temperature environments without adequate heat sinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30V
ID
-4.2A
RDS(on)
40mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

85b03d3696b017ac29948eaef6a32d10_2303011000_AGM-Semi-AGM3407E_C5367091.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM3407E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET designed for high-density power applications, featuring low RDS(ON) and fast switching characteristics.