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AGM55P10D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM55P10D product

AGM55P10D

MOSFETs - Single

P-ChannelMOSFET100VTO-252

The AGM55P10D is a -100V, -30A P-channel trench MOSFET in a TO-252 package, optimized for low-resistance power switching applications.

Best for

  • Load switching
  • Battery protection

Avoid if

  • Applications requiring extremely low gate charge

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-100 V
ID
-30 A
RDS(on)
52 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

14108c5885c16480ef49ca2dba2d2a8e_2306191430_AGM-Semi-AGM55P10D_C7431164.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM55P10D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel power MOSFET utilizing trench technology, designed for high-efficiency switching in a TO-252 package.