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AGM6015H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM6015H product

AGM6015H

MOSFETs - Single

MOSFETN-Channel60VTO-263

The AGM6015H is a high-performance 60V N-Channel Trench MOSFET designed for high-current applications requiring low conduction losses.

Best for

  • Load switching
  • Battery protection
  • BLDC motor drivers

Avoid if

  • Space-constrained designs requiring smaller packages than TO-263.

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

VDS
60V
ID
210A
RDS(on)
1.5mΩ
Package
TO-263

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

d896dee47fcff422e36724f59ed9087c_2307211606_AGM-Semi-AGM6015H_C7466530.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM6015H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM6015H is an N-Channel Trench MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current rating of 210A.