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AGM610MN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM610MN product

AGM610MN

MOSFETs - Single

MOSFETDual N-Channel60VSOP-8

The AGM610MN is a dual N-channel trench MOSFET designed for high-efficiency power switching applications.

Best for

  • Battery protection
  • Motor control

Avoid if

  • High-power applications exceeding 2.5W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
12 A
RDS(on)
12 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Management

Datasheet

8bd9b3f71fc8aba5f8d8d15625c4c115_2403201054_AGM-Semi-AGM610MN_C22364304.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM610MN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel trench MOSFET in an SOP-8 package, optimized for low RDS(ON) and fast switching.