AGM612AP Datasheet, Specs, Alternatives & ECAD | AGM-Semi | PartGenie

AI summary

AGM612AP product

The AGM612AP is a 60V N-channel trench MOSFET designed for high-efficiency power applications, featuring low on-resistance and a compact PDFN3.3*3.3 footprint.

Best for

Load switching
Battery protection
BLDC motor drivers

Avoid if

Applications requiring higher than 60V or extremely high continuous current beyond package thermal limits.

Check before use

Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS: 60 V
ID: 50 A
RDS(on): 11 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementMotor Control

Datasheet

f7f2ad6d10d0c4f12721e32bfc7d0490_2402221100_AGM-Semi-AGM612AP_C5349119.pdf

800 KB

CAD Models

Download ECAD models for AGM612AP: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AGM612AP is an N-channel trench MOSFET with a 60V drain-source voltage rating and 50A continuous drain current capability.