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AGM635E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGM635E product

AGM635E

MOSFETs - Single

MOSFETN-Channel60VSOT-23-3

The AGM635E is a 60V, 5A N-channel Trench MOSFET in a SOT-23-3 package, designed for high-efficiency power switching applications.

Best for

  • Load switching
  • Battery protection
  • BLDC motor drivers

Avoid if

  • Applications exceeding 5A continuous current or requiring high thermal dissipation

Check before use

  • Thermal resistance (RθJA = 104°C/W) and gate drive voltage

Key specifications

VDS
60 V
ID
5 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

024e0a556b00fa7e12f35f61e2c3ff77_2303211000_AGM-Semi-AGM635E_C5381823.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGM635E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel Trench MOSFET featuring low RDS(on) and fast switching characteristics, suitable for compact power management.