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AGMH022N10C AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGMH022N10C product

AGMH022N10C

MOSFETs - Single

MOSFETN-Channel100VTO-220

The AGMH022N10C is a high-performance 100V N-channel Trench MOSFET optimized for low conduction losses in power-intensive applications.

Best for

  • Battery protection circuits
  • BLDC motor drivers
  • Synchronous rectification in SMPS

Avoid if

  • Space-constrained designs requiring SMD packages
  • Applications requiring extremely low gate charge for ultra-high frequency switching

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

VDS
100 V
ID
220 A
RDS(on)
2.2 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

9ab14aa1d168bf8180db837c3719bcec_2309121403_AGM-Semi-AGMH022N10C_C17701064.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGMH022N10C: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel Trench MOSFET with a 100V drain-source voltage rating and 220A continuous drain current capability, housed in a TO-220 package.