AGMH022P10H Datasheet, Specs, Alternatives & ECAD | AGM-Semi | PartGenie

AI summary

AGMH022P10H product

The AGMH022P10H is a high-performance -100V P-Channel Trench MOSFET in a TO-263 package, optimized for high-current power management and motor control.

Best for

Load switching
Battery protection
BLDC motor drivers
Synchronous rectification

Avoid if

Applications requiring N-Channel logic
Space-constrained designs where TO-263 is too large

Check before use

Thermal dissipation requirements
Gate drive voltage levels

Key specifications

VDS: -100V
ID: -65A
RDS(on): 15mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementMotor Control

Datasheet

5a9e9ac46de34e6851c58c80a192c39e_2309121403_AGM-Semi-AGMH022P10H_C17701048.pdf

800 KB

CAD Models

Download ECAD models for AGMH022P10H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel power MOSFET utilizing advanced trench technology, designed for high-efficiency switching and protection applications.