AGMH035N10H Datasheet, Specs, Alternatives & ECAD | AGM-Semi | PartGenie

AI summary

AGMH035N10H product

The AGMH035N10H is a high-performance 100V N-Channel trench MOSFET in a TO-263 package, designed for high-current applications like motor drives and power supplies.

Best for

BLDC motor drivers
Synchronous rectification in SMPS
Battery protection circuits

Avoid if

Space-constrained designs requiring smaller packages than TO-263
Applications requiring extremely low gate charge for ultra-high frequency switching

Check before use

Thermal dissipation requirements
Gate drive voltage levels

Key specifications

VDS: 100 V
ID: 160 A
RDS(on): 3.5 mΩ
Package: TO-263

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementMotor Control

Datasheet

623c5abd1a733aeb469ebf1ac1a52845_2402221102_AGM-Semi-AGM-Semi-AGMH035N10H_C5464790.pdf

800 KB

CAD Models

Download ECAD models for AGMH035N10H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel power MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and fast switching in a TO-263 package.