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AGMH12H05H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AGMH12H05H product

AGMH12H05H

MOSFETs - Single

MOSFETN-Channel120VTO-263

The AGMH12H05H is a high-performance 120V N-Channel Trench MOSFET designed for high-current power applications.

Best for

  • High-current switching
  • Motor control
  • Battery management

Avoid if

  • Low-voltage applications where lower RDS(on) devices are available

Check before use

  • Thermal design
  • Gate drive requirements

Key specifications

VDS
120 V
ID
125 A
RDS(on)
4.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Supplies

Datasheet

df453e57ca5734b877387a32fabbcef5_2402221102_AGM-Semi-AGM-Semi-AGMH12H05H_C7509635.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AGMH12H05H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Trench MOSFET featuring a 120V drain-source breakdown voltage and 125A continuous current capability.