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AO3422MI-MS AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO3422MI-MS product

AO3422MI-MS

MOSFETs - Single

N-ChannelMOSFET60VSOT-23-3L

The AO3422MI-MS is a 60V N-Channel MOSFET in a SOT-23-3L package, optimized for low-voltage gate drive applications.

Best for

  • Battery protection circuits
  • Load switching
  • PWM control

Avoid if

  • Applications requiring higher than 4.5A continuous current
  • High-temperature environments without adequate heat sinking

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
4.5 A
RDS(ON)
80 mΩ (max)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

c30890a79fd1159b914b6da85974483e_2211211800_MSKSEMI-AO3422MI-MS_C5278010.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO3422MI-MS: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel MOSFET designed for switching applications, featuring a 60V drain-source breakdown voltage and 4.5A continuous current capability.