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AO3434A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO3434A-HXY product

AO3434A-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOT-23-3L

The AO3434A is a 30V N-Channel MOSFET in a SOT-23-3L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • PWM control

Avoid if

  • Applications requiring voltages above 30V
  • High-power designs exceeding 1.4W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
5.8 A
RDS(on)
28 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

2a5c9b8c9b03ee89ec7940f930474248_2403261739_HXY-MOSFET-AO3434A-HXY_C22366949.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO3434A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, designed for efficient switching in compact surface-mount applications.