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AO3481-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO3481-HXY product

AO3481-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-23-3L

The AO3481 is a P-Channel enhancement mode MOSFET in a SOT-23-3L package, designed for low-voltage switching and battery protection.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-voltage applications exceeding -30V

Check before use

  • Gate threshold voltage and thermal dissipation

Key specifications

VDS
-30 V
ID
-4.2 A
RDS(ON)
< 54 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

41c9d2847dd2b1f2092bb192b463a9a6_2403261742_HXY-MOSFET-AO3481-HXY_C22367236.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO3481-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET utilizing trench technology, optimized for low gate charge and low on-resistance.