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AO4406A-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO4406A-HXY product

AO4406A-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOP-8

The AO4406A is a 30V N-Channel MOSFET in an SOP-8 package, optimized for low RDS(ON) and efficient switching in battery and power management circuits.

Best for

  • Battery protection circuits
  • Load switching
  • Uninterruptible power supplies (UPS)

Avoid if

  • Applications requiring voltages exceeding 30V
  • High-power designs exceeding the thermal dissipation limits of the SOP-8 package

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Drain-Source Voltage
30 V
Continuous Drain Current
15 A
On-Resistance (RDS(ON))
< 10 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Switching

Datasheet

92ae5196a96c52b3126444c02659a7d3_2404231036_HXY-MOSFET-AO4406A-HXY_C22366786.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO4406A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AO4406A is an N-Channel Enhancement Mode MOSFET from HXY MOSFET, featuring a 30V drain-source voltage and 15A continuous drain current capability.