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AO4447A(UMW) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO4447A(UMW) product

AO4447A(UMW)

MOSFETs - Single

MOSFETP-Channel30V

The AO4447A is a -30V P-Channel MOSFET designed for high-efficiency power switching applications.

Best for

  • Power management
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-18.5 A
RDS(ON)
5.8 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a69af020027233c80ddcb5c4b22fc3ed_2311091747_UMW-Youtai-Semiconductor-Co---Ltd--AO4447A-UMW_C7588050.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO4447A(UMW): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AO4447A is a P-Channel Trench Power MOSFET with a -30V drain-source voltage rating, optimized for low on-resistance.