ProjectsPricingInsights

AO4884-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO4884-HXY product

AO4884-HXY

MOSFETs - Arrays

Dual N-ChannelMOSFET40VSOP-8

The AO4884-HXY is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery protection circuits
  • Load switching

Avoid if

  • High-frequency switching applications requiring extremely low gate charge

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
40 V
ID
12 A
RDS(ON) (10V)
< 20 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

5e8afc456d3ccdad89770d93b0a1ed02_2209201730_HXY-MOSFET-AO4884-HXY_C5148656.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO4884-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and low gate charge.