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AO8814-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO8814-HXY product

AO8814-HXY

MOSFETs - Arrays

Dual MOSFETN-ChannelTrench

The AO8814 is a dual N-channel trench MOSFET in a TSSOP-8 package, designed for efficient power switching and load management.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1.25W dissipation

Check before use

  • Gate drive voltage levels

Key specifications

VDS
20V
ID
7.5A
RDS(ON)
13mΩ (max)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

73f1da0bc5170a755216bfb738d4a2bc_2312221750_HXY-MOSFET-AO8814-HXY_C19723843.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO8814-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET featuring high cell density and low RDS(ON) for compact power applications.