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AO8822-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO8822-HXY product

AO8822-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelTSSOP-8

The AO8822 is a dual N-channel enhancement mode MOSFET in a TSSOP-8 package, designed for small power switching and load management.

Best for

  • Small power switching
  • Load switches

Avoid if

  • High-current applications exceeding 7A continuous

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
20V
ID
7A
RDS(ON)
14mΩ @ 4.5V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

5e0e6b5dc505ff9cef4223c2d91c3aef_2403261743_HXY-MOSFET-AO8822-HXY_C22367365.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO8822-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AO8822 is a dual N-channel trench MOSFET featuring high cell density, low RDS(ON), and low gate charge.