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AO9926B-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AO9926B-HXY product

AO9926B-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSOP-8

The AO9926B is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications with a 20V drain-source voltage and 8A continuous current rating.

Best for

  • Battery management systems
  • Low-voltage power switching

Avoid if

  • Applications requiring VDS > 20V
  • High-power designs exceeding 2.25W dissipation

Check before use

  • Thermal resistance (RθJC = 80°C/W)
  • Gate threshold voltage (VGS(th) = 0.45V to 1V)

Key specifications

VDS
20 V
ID
8 A
RDS(on)
< 20 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

a551afd4d25692a9cdaa75598ac23be0_2403261740_HXY-MOSFET-AO9926B-HXY_C22367024.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AO9926B-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AO9926B is a dual N-channel enhancement mode MOSFET from HXY MOSFET, utilizing trench technology for low RDS(on) and gate charge.