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AOD2610E-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AOD2610E-HXY product

AOD2610E-HXY

MOSFETs - Single

N-ChannelMOSFET60V80A

The AOD2610E-HXY is a 60V, 80A N-Channel MOSFET in a TO-252-2L package, optimized for high-efficiency switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring extremely low thermal footprint without heatsinking

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
80 A
RDS(ON)
8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

193baf56752bedfd3765e474c155a6ad_2212161130_HXY-MOSFET-AOD2610E-HXY_C4748753.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AOD2610E-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, designed for low RDS(ON) and low gate charge.