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AON3419-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON3419-HXY product

AON3419-HXY

MOSFETs - Single

P-ChannelMOSFET30V32A

The AON3419-HXY is a high-performance P-Channel MOSFET suitable for high-current DC/DC conversion and switching applications.

Best for

  • DC/DC converters
  • High-side switching

Avoid if

  • Applications requiring N-Channel logic
  • Extremely high-voltage systems exceeding 30V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-32 A
RDS(ON)
12 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

84bf2ba4bc858245460a011f797e9140_2207201830_HXY-MOSFET-AON3419-HXY_C4748765.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON3419-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-current applications, featuring a -30V drain-source voltage and -32A current rating.