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AON3611-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON3611-HXY product

AON3611-HXY

MOSFETs - Arrays

MOSFETDual ChannelN-ChannelP-Channel

The AON3611-HXY is a dual N+P-channel MOSFET in a DFN3X3B-8L package, optimized for battery protection and switching.

Best for

  • Battery management systems
  • Compact power switching

Avoid if

  • High-current applications exceeding 16A/14A

Check before use

  • Thermal design and gate drive voltage

Key specifications

VDS
30V / -30V
ID
16A / -14A
RDS(on)
20mΩ / 30mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerConsumer

Datasheet

bbd00dbe037e612d7034fdbad6ad87f6_2209201730_HXY-MOSFET-AON3611-HXY_C5148676.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON3611-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel and P-channel enhancement mode MOSFET designed for efficient switching in compact applications.