ProjectsPricingInsights

AON6312-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON6312-HXY product

AON6312-HXY

MOSFETs - Single

N-ChannelMOSFET30V150A

The AON6312-HXY is a high-current 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for efficient power switching.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring voltages significantly above 30V

Check before use

  • Thermal dissipation requirements at 150A

Key specifications

VDS
30 V
ID
150 A
RDS(ON)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

d70f5202c4bb9ed5f0a1af7da0d47bb2_2212161130_HXY-MOSFET-AON6312-HXY_C5148664.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON6312-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power switching applications.