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AON6358-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON6358-HXY product

AON6358-HXY

MOSFETs - Single

N-ChannelMOSFET30VTrench

The AON6358 is a high-performance 30V N-Channel MOSFET designed for high-current switching applications.

Best for

  • High-current power switching
  • Battery management systems

Avoid if

  • Low-power, space-constrained applications where smaller packages are required

Check before use

  • Thermal dissipation requirements
  • Package current limitations

Key specifications

VDS
30 V
ID
150 A
RDS(on)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

eea74e23e9fa1ab9ff43d7fef1279cac_2403261736_HXY-MOSFET-AON6358-HXY_C22366637.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON6358-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AON6358 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.