ProjectsPricingInsights

AON6407-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON6407-HXY product

AON6407-HXY

MOSFETs - Single

P-ChannelMOSFET30V100A

The AON6407 is a high-performance P-Channel MOSFET designed for power switching applications like battery protection and load switches.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs without thermal dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
-30 V
ID
-100 A
RDS(on)
4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

640df98b1a33e9a291b2b4712d712b51_2403251715_HXY-MOSFET-AON6407-HXY_C5148668.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON6407-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AON6407 is a P-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and efficient switching.