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AON6413-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AON6413-HXY product

AON6413-HXY

MOSFETs - Single

MOSFETP-ChannelPower

The AON6413 is a high-performance P-Channel MOSFET designed for power switching and battery protection.

Best for

  • Battery protection
  • Power switching

Avoid if

  • Applications requiring N-Channel logic

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-70 A
RDS(on)
8.8 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

8ce6ac7262c43f288110c42b0f9dc5ca_2403261743_HXY-MOSFET-AON6413-HXY_C22367328.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AON6413-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.