AON7409-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

AON7409-HXY product

The AON7409-HXY is a high-performance P-Channel MOSFET designed for power management, offering low on-resistance and efficient switching in a compact DFN5X6-8L package.

Best for

Battery management systems
High-current load switching

Avoid if

Applications requiring N-Channel logic
Extremely space-constrained designs where DFN5x6 is too large

Check before use

Thermal design for 70A continuous current
Gate drive voltage levels

Key specifications

VDS: -30 V
ID: -70 A
RDS(on): 8.8 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementBattery Protection

Datasheet

4db241d74fe11b4e0dc0290603579fac_2403261743_HXY-MOSFET-AON7409-HXY_C22367329.pdf

800 KB

CAD Models

Download ECAD models for AON7409-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and efficient switching.