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AOTE32136C-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AOTE32136C-HXY product

AOTE32136C-HXY

FETs

MOSFETDual N-ChannelTSSOP-8

The AOTE32136C is a dual N-channel enhancement mode MOSFET in a TSSOP-8 package, optimized for low-voltage power switching and load management.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • High-voltage applications exceeding 20V
  • High-power designs requiring >1.25W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
20V
ID
7A
RDS(on) @ 4.5V
14mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

d089c93b5375c09db36d238be7348921_2403261743_HXY-MOSFET-AOTE32136C-HXY_C22367367.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AOTE32136C-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel trench MOSFET designed for small power switching and load switch applications.