AP12N10S Datasheet, Specs, Alternatives & ECAD | ALLPOWER | PartGenie

AI summary

AP12N10S product

The AP12N10S is a 100V, 12A N-Channel MOSFET utilizing Split Gate Trench technology, optimized for low RDS(ON) and efficient power switching in SOP-8 packages.

Best for

PWM control circuits
Load switching
General power management

Avoid if

Applications requiring higher than 12A continuous current
Extreme high-temperature environments exceeding 150°C

Check before use

Gate drive voltage levels
Thermal dissipation on the PCB

Key specifications

VDS: 100 V
ID: 12 A
RDS(on): 8 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

4a94c593a2b79db9371073c87e2b96be_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP12N10S_C5443729.pdf

800 KB

CAD Models

Download ECAD models for AP12N10S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP12N10S is an N-Channel enhancement mode MOSFET from ALLPOWER, designed for high-efficiency power management and switching applications.