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AP180N03G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP180N03G product

AP180N03G

MOSFETs - Single

N-ChannelMOSFET30V180A

The AP180N03G is a high-performance 30V N-Channel MOSFET designed for high-current applications, offering low on-resistance and fast switching in a compact PDFN5X6 package.

Best for

  • Load switching
  • PWM control circuits

Avoid if

  • Applications requiring higher than 30V breakdown voltage

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
180 A
Rds(on)
1.7 mΩ
Package
PDFN5X6

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Control

Datasheet

3cdb44e3455dd1c6a5fc1767d6047859_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP180N03G_C5443711.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP180N03G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP180N03G is an N-Channel Power MOSFET with a 30V drain-source voltage rating and 180A continuous drain current capability, housed in a surface-mount PDFN5X6 package.