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AP18P30Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP18P30Q product

AP18P30Q

MOSFETs - Single

P-ChannelMOSFET30VPDFN3*3

The AP18P30Q is a P-Channel enhancement mode MOSFET designed for high-efficiency power switching applications in a compact PDFN3*3 package.

Best for

  • DC/DC converters
  • Portable device load switching
  • Battery management systems

Avoid if

  • Applications requiring high-side switching with very low gate drive voltages below 4.5V.

Check before use

  • Thermal dissipation requirements for the PCB layout.

Key specifications

VDS
-30 V
ID
-20 A
RDS(on) (Typ)
10.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPortable Electronics

Datasheet

7944c17b0930ad5e6ec84ab49912e198_2304120930_ALLPOWER-ShenZhen-Quan-Li-Semiconductor-AP18P30Q_C5443704.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP18P30Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP18P30Q is a P-Channel Trench MOSFET featuring a 30V drain-source voltage and 20A continuous drain current capability, optimized for fast switching.