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AP2P053N AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP2P053N product

AP2P053N

MOSFETs - Single

MOSFETP-ChannelSOT-23S

The AP2P053N is a -20V P-channel enhancement mode MOSFET designed for efficient low-voltage power applications in a compact SOT-23S package.

Best for

  • DC/DC converters
  • Low-voltage power switching

Avoid if

  • High-voltage applications exceeding -20V
  • High-current designs requiring larger thermal dissipation

Check before use

  • Gate drive voltage levels
  • Thermal design on PCB

Key specifications

VDS
-20 V
ID
-4.2 A
RDS(ON)
65 mΩ
Package
SOT-23S

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC/DC Converters

Datasheet

e13348bea55e2d5180a0a3b75c51ede7_1912111437_APEC-Advanced-Power-Elec-AP2P053N_C380196.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP2P053N: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel power MOSFET optimized for low-voltage switching applications, featuring a -20V drain-source voltage and -4.2A continuous drain current.