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AP30T10GH AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP30T10GH product

AP30T10GH

MOSFETs - Single

MOSFETN-Channel100VTO-252

The AP30T10GH is a 100V N-channel power MOSFET in a TO-252 package, suitable for general-purpose power switching applications.

Best for

  • General power switching
  • DC-DC converters

Avoid if

  • Applications requiring extremely low RDS(on) below 55mΩ
  • Space-constrained designs where TO-252 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive compatibility

Key specifications

VDS
100 V
ID
19 A
RDS(on)
55 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

abaa70bd741f24e44c2424e9fd87c033_2403271727_APEC-Advanced-Power-Elec-AP30T10GH_C5253032.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP30T10GH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode power MOSFET designed for high-efficiency power applications, featuring a 100V drain-source breakdown voltage.