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AP3910GD AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP3910GD product

AP3910GD

MOSFETs - Arrays

MOSFETComplementaryPowerTrench

The AP3910GD is a complementary N and P-channel power MOSFET in a PDFN5*6-8L package, optimized for high-efficiency power switching applications like H-bridges and inverters.

Best for

  • H-bridge motor drivers
  • DC-AC inverters
  • General power switching

Avoid if

  • Applications requiring extremely high-speed switching beyond the device's dynamic characteristics
  • Designs where space constraints prohibit the use of a 5x6mm footprint

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS (N/P)
30V / -30V
ID (N/P)
36A / -30A
RDS(on) (N/P)
12mΩ / 14mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Inverters

Datasheet

ac89af952eac8683b7df3f9e60301c7d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP3910GD: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP3910GD is an N and P-channel complementary power MOSFET designed for high-density power applications, utilizing advanced trench technology to achieve low on-resistance.