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AP4525GEH AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP4525GEH product

AP4525GEH

MOSFETs - Arrays

MOSFETN-ChannelP-ChannelPower

The AP4525GEH is a dual N and P-channel enhancement mode power MOSFET designed for efficient power switching applications.

Best for

  • Complementary switching circuits
  • Power management

Avoid if

  • High-current applications exceeding 15A

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS (N/P)
40V / -40V
ID (N/P)
15A / -12A
RDS(on) (N/P)
28mΩ / 42mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

108d964ddf5a5f3a2222b2f247155f2d_2212201430_APEC-Advanced-Power-Elec-AP4525GEH_C115241.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP4525GEH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual-channel (N and P) enhancement mode power MOSFET housed in a TO-252-4L package, suitable for complementary switching applications.