AP4910GD Datasheet, Specs, Alternatives & ECAD | ALLPOWER | PartGenie

AI summary

AP4910GD product

The AP4910GD is a dual N and P-channel enhancement mode MOSFET in a DFN5X6 package, designed for high-power switching and management applications.

Best for

PWM applications
Load switching
General power management

Avoid if

Applications requiring extremely low gate drive voltages below 2.5V
Space-constrained designs where DFN5X6 is too large

Check before use

Thermal dissipation requirements
Gate drive circuit compatibility

Key specifications

VDS: 40V / -40V
ID: 30A / -40A
RDS(on): 14mΩ / 13.5mΩ

Compliance & Environment

RoHS: Yes
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial Switching

Datasheet

baaf5995241ef52351dcbedb71965eff.pdf

800 KB

CAD Models

Download ECAD models for AP4910GD: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The AP4910GD is a complementary N and P-channel enhancement mode MOSFET array housed in a surface-mount DFN5X6 package.