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AP4N2R6H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

AP4N2R6H product

AP4N2R6H

MOSFETs - Single

MOSFETN-Channel40VTO-252

The AP4N2R6H is a high-performance 40V N-channel power MOSFET in a TO-252 package, optimized for low on-resistance and high-current efficiency.

Best for

  • Power supplies
  • DC-DC converters
  • Motor control

Avoid if

  • Low-power, space-constrained applications where a smaller package is required.

Check before use

  • Thermal dissipation requirements and PCB copper area for heat sinking.

Key specifications

VDS
40 V
ID
150 A
RDS(on)
2.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

54e586ed49bb4bd58819b7b03ba07020_2403271727_APEC-Advanced-Power-Elec-AP4N2R6H_C5185133.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for AP4N2R6H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode power MOSFET designed for high-efficiency power applications.